元磊
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教授
博士生导师
硕士生导师
- 主要任职：教师
- 性别：男
- 毕业院校：西安电子科技大学
- 学历：博士研究生毕业
- 学位：博士研究生毕业
- 在职信息：在岗
- 所在单位：微电子学院
- 入职时间： 2016-07-26
- 学科：微电子学与固体电子学
- 办公地点：北校区东大楼510B
- 电子邮箱：81d56c0292b85d6d81d8fdef96a3f92e17da1ff43f6e0af8bf70f8194b9e97aadfb712dc8e7c96fb8a37036e3428c3b0fd1f593d7f27cb692d73531c50963313698eb51de57807039e091d6dcbee218bb6f2b0b7d5f60bafc50770cf9e0447adeccb29242cc21715a4db236471b9ab8a92338e9373436d324df88bee02e84619
访问量：
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[1]Crystallographic Orientation-dependent Resistive Switching Devices Based on Hybrid Ga2o3 Thin Films:Advanced Composites And Hybrid Materials,2023,6(3)
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[2]High Temperature Reliability And Performance Evaluation of 1200 V Sic Mosfets:Journal of Crystal Growth,2023,606
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[3]Enhanced Responsivity of Beta-ga2o3 Ultraviolet Photodetector Using Pt/ito Stacked Electrode:Optoelectronics And Advanced Materials-rapid Communications,2020,14(11-12):494-500
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[4]Energy-band Alignment of (hfo2)(x)(al2o3)(1-x) Gate Dielectrics Deposited by Atomic Layer Deposition on Beta-ga2o3 (-201):Applied Surface Science,2018,433(Mar.1):530-534
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[5]Analytical Model And Structure of the Multilayer Enhancement-mode Beta-ga2o3 Planar Mosfets:IEEE Transactions on Electron Devices,2022,69(2):682-689
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[6]Influence of Metal Gate Electrodes on Electrical Properties of Atomic-layer-deposited Al-rich Hfalo/ga2o3 Moscaps:IEEE Transactions on Electron Devices,2020,67(4):1730-1736
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[7]Progress of Ultra-wide Bandgap Ga2o3 Semiconductor Materials in Power Mosfets:IEEE Transactions on Power Electronics,2020,35(5):5157-5179
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[8]Advancing understanding of structural, electronic, and magnetic properties in 3d-transition-metal TM-doped Alpha-Ga2O3 (TM = V, Cr, Mn, and Fe): A first-principles and Monte Carlo study:JOURNAL OF APPLIED PHYSICS,2023,134(22)
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[9]Enhanced Responsivity of Beta-ga2o3 Ultraviolet Photodetector Using Pt/ito Stacked Electrode:Optoelectronics And Advanced Materials-rapid Communications,2020,14(11-12):494-500
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[10]Progress of Ultra-wide Bandgap Ga2o3 Semiconductor Materials in Power Mosfets:IEEE Transactions on Power Electronics,2020,35(5):5157-5179